Electrically bistable thin-film device based on PVK and GNPs polymer material

Y. Song*, Q. D. Ling, S. L. Lim, E. Y H Teo, Y. P. Tan, Lain-Jong Li, E. T. Kang, D. S H Chan, Chunxiang Zhu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

69 Scopus citations

Abstract

We present an electrical-bistability device based on MIM-sandwiched structure. Poly(N-vinylcarbazole) (PVK) mixed with gold nanoparticles (GNPs) serve as the active layer between two metal electrodes. After applying a voltage, the as-fabricated device can transit from low conductivity state to high conductivity state. By simply using a reverse bias, the high conductivity state can return to the low conductivity state. An on/off current ratio as high as 105 at room temperature has been achieved. The memory effect is attributed to electric-field-induced charge transfer complex formed between the PVK and the GNPs. The device shows a good stability under stress test for both states and exhibits a high potential on Flash-type memory applications.

Original languageEnglish (US)
Pages (from-to)107-110
Number of pages4
JournalIEEE Electron Device Letters
Volume28
Issue number2
DOIs
StatePublished - Feb 1 2007

Keywords

  • Electrical bistability
  • Gold nanoparticle (GNP)
  • Memory effect
  • Poly(N-vinylcarbazole) (PVK)
  • Thin-film device

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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