Electrical transport and magnetic properties of a possible electron-doped layered manganese oxide

Y. G. Zhao*, Y. H. Li, S. B. Ogale, M. Rajeswari, V. Smolyaninova, T. Wu, A. Biswas, L. Salamanca-Riba, R. L. Greene, R. Ramesh, T. Venkatesan, J. H. Scott

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We report on the structural, transport, and magnetic properties of La0.67Sr0.33MnOx thin films grown in vacuum by pulsed-laser deposition. The as-grown thin films have both the matrix La1.34Sr0.66MnO4 phase with K2NiF4 structure and an embedded MnO phase. The electrical transport and magnetic properties of the films are determined mainly by those of the matrix phase. By annealing, the as-grown thin films can be transformed into the normal La0.67Sr0.33MnO3 single phase, which shows the expected colossal magnetoresistance effect. Based on the composition of the matrix phase, and the structural, electrical, and magnetic properties of the films, we propose that the matrix phase is possibly electron doped with a mixed valence of Mn2+/Mn3+ instead of the Mn3+/Mn4+ as in the hole-doped case.

Original languageEnglish (US)
Pages (from-to)4141-4145
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number6
StatePublished - Feb 1 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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