Electrical properties of pb(zr0.53ti 0.47)o3 thin film capacitors with modified ruo2 bottom electrodes

Husam Niman Alshareef, K. R. Bellur, O. Auciello, A. I. Kingon

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Growth of Pb(Zro.53Ti0.47)O3 (PZT) thin films on RuO2 electrodes by the sol-gel process is usually accompanied by the formation of second phases. The resulting RuO2 /PZT/RuO2 capacitors are fatigue-free up to nearly 10 switching -3 2 cycles, but they have high leakage currents (J-10-3 A/cm at 1 volt) and large property variation. We have developed several modifications of the RuO2 bottom electrode which enhance nucleation of the perovskite phase, eliminate or reduce the second phases, and control film orientation and properties. The PZT films deposited on the modified RuO2 electrodes have leakage current densities which are two to four orders of magnitude lower than those of PZT films deposited on the unmodified RuO2 electrodes. In most cases, the excellent resistance to polarization fatigue which is characteristic of the RUO2/PZT/RUO2 capacitors, is maintained.

Original languageEnglish (US)
Pages (from-to)151-163
Number of pages13
JournalIntegrated Ferroelectrics
Volume8
Issue number1-2
DOIs
StatePublished - Jan 1 1995

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Electrical properties of pb(zr0.53ti 0.47)o3 thin film capacitors with modified ruo2 bottom electrodes'. Together they form a unique fingerprint.

Cite this