Electrical humidity response of sol-Gel processed undoped and alkali-doped TiO2-Al2O3 thin films

Enrico Traversa*, Manuela Baroncini, Elisabetta Di Bartolomeo, Gualtiero Gusmano, Plinio Innocenzi, Alessandro Martucci, Andrea Bearzotti

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


Al2O3-TiO2 thin films were prepared by a sol-gel processing. Sols were prepared having different TiO2/Al2O3 molar ratios, i.e., 9:1, 8:2, and 6:4, without and with the addition of 10 at% of K ions. The films were prepared by dipping the substrates (silicon wafers, alkali-free glass or alumina with comb-type Au electrodes) in the sols. The films were fired in air for 1h at 300, 500, 650 and 800°C. The films were amorphous, at any composition, up to the firing temperature of 500°C. Crystallization of the films was inhibited by larger contents of Al2O3 and K. The humidity-sensitive electrical properties of the thin films were studied using d.c. and a.c. measurements. The addition of K dramatically improved the relative humidity response of the films.

Original languageEnglish (US)
Pages (from-to)753-758
Number of pages6
JournalJournal of the European Ceramic Society
Issue number6-7
StatePublished - Jun 1 1999


  • AlO
  • Electrical properties
  • Films
  • Sol-gel processes
  • TiO

ASJC Scopus subject areas

  • Ceramics and Composites


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