Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets

Fei Hui, Wenjing Fang, Wei Sun Leong, Tewa Kpulun, Haozhe Wang, Hui Ying Yang, Marco A. Villena, Gary Harris, Jing Kong, Mario Lanza

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Large-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscopy (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability in the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies.
Original languageEnglish (US)
Pages (from-to)39895-39900
Number of pages6
JournalACS Applied Materials and Interfaces
Volume9
Issue number46
DOIs
StatePublished - Nov 22 2017
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)

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