Electrical bias stressing and radiation induced charge trapping in HfO 2/SiO2 dielectric stacks

R. A.B. Devine*, T. Busani, Manuel Quevedo-Lopez, Husam Niman Alshareef

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Electrical bias stressing and X irradiation experiments have been carried out on HfO2 / SiO2 dielectric stacks. Evidence is found for a negative electric field induced positive charge injection and trapping and radiation induced positive charge trapping. Positive electric fields associated with radiation result in negative charge trapping. Potential-induced cyclic injection/removal of positive charge is also observed. It is suggested that these structures are radiation soft.

Original languageEnglish (US)
Article number104101
JournalJournal of Applied Physics
Issue number10
StatePublished - Jun 11 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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