Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

C. Y. Chen, P. H. Chang, K. T. Tsai, J. H. He

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2x10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized.

Original languageEnglish (US)
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1177-1178
Number of pages2
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: Jan 3 2010Jan 8 2010

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period01/3/1001/8/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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