Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

J. H. He, P. H. Chang, C. Y. Chen, K. T. Tsai

Research output: Contribution to journalArticlepeer-review

82 Scopus citations

Abstract

We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 × 10 -5 Ω cm2. The resistivity of the ZnO NWs is measured to be 2.2 × 10-2 Ω cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as ∼108 have been fabricated and characterized.

Original languageEnglish (US)
Article number135701
JournalNanotechnology
Volume20
Issue number13
DOIs
StatePublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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