Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

Mohamed T. Ghoneim, Jhonathan Prieto Rojas, Chadwin D. Young, Gennadi Bersuker, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.
Original languageEnglish (US)
Pages (from-to)579-585
Number of pages7
JournalIEEE Transactions on Reliability
Volume64
Issue number2
DOIs
StatePublished - Jun 2015

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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