Electric fields in AlGaN/GaN quantum well structures

C. McAleese*, P. M F J Costa, D. M. Graham, H. Xiu, J. S. Barnard, M. J. Kappers, P. Dawson, M. J. Godfrey, C. J. Humphreys

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

This paper presents a comparative study of the magnitude of the electric fields in AlGaN/GaN quantum well structures, measured using electron holography in a transmission electron microscope and estimated from a comparison of low temperature photoluminescence peak energies with calculated values. The values derived from the two techniques were found to be in reasonable agreement for the structures examined here. A larger field across the GaN well was observed from a single quantum well compared to a 10 period structure with equivalent well thickness, while the presence of an electric field across the barrier of the single quantum well was also detected by electron holography.

Original languageEnglish (US)
Pages (from-to)1551-1559
Number of pages9
JournalPhysica Status Solidi (B) Basic Research
Volume243
Issue number7
DOIs
StatePublished - Jun 2006
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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