This paper presents a comparative study of the magnitude of the electric fields in AlGaN/GaN quantum well structures, measured using electron holography in a transmission electron microscope and estimated from a comparison of low temperature photoluminescence peak energies with calculated values. The values derived from the two techniques were found to be in reasonable agreement for the structures examined here. A larger field across the GaN well was observed from a single quantum well compared to a 10 period structure with equivalent well thickness, while the presence of an electric field across the barrier of the single quantum well was also detected by electron holography.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials