Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer

Thomas P. Brennan, Orlando Trejo, Katherine E. Roelofs, John Xu, Fritz B. Prinz, Stacey F. Bent

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

Atomic layer deposition (ALD) was used to grow both PbS quantum dots and Al2O3 barrier layers in a solid-state quantum dot-sensitized solar cell (QDSSC). Barrier layers grown prior to quantum dots resulted in a near-doubling of device efficiency (0.30% to 0.57%) whereas barrier layers grown after quantum dots did not improve efficiency, indicating the importance of quantum dots in recombination processes. © 2013 The Royal Society of Chemistry.
Original languageEnglish (US)
Pages (from-to)7566
JournalJournal of Materials Chemistry A
Volume1
Issue number26
DOIs
StatePublished - 2013
Externally publishedYes

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