Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays

G. J. Lin*, K. Y. Lai, C. A. Lin, Y. L. Lai, Jr-Hau He

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Antireflective ZnO nanorod arrays (NRAs) by a scalable chemical method have been applied for InGaN-based multiple quantum well solar cells. The length of the NRAs plays an important role in photovoltaic characteristics. It was found that the 1.1-μm-long NRA results in enhanced conversion efficiency due to the suppressed surface reflection. However, the 2.5-μm-long NRAs, although exhibiting the lowest reflection, lead to slightly deteriorated performances, possibly due to the increased absorption of the NRAs. The results indicate that the absorption of lengthened NRAs should be considered when optimizing their antireflection performances. We demonstrated a viable efficiency-boosting way for photovoltaics.

Original languageEnglish (US)
Article number5930323
Pages (from-to)1104-1106
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number8
DOIs
StatePublished - Aug 1 2011

Keywords

  • Antireflection (AR)
  • InGaN
  • ZnO nanorod arrays (NRAs)
  • conversion efficiency
  • multiple quantum well (MQW)
  • solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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