Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes

Guangyu Liu*, Jing Zhang, Chee Keong Tan, Nelson Tansu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

108 Scopus citations

Abstract

The electrical and optical characteristics of InGaN quantum-well light-emitting diodes with large-bandgap AlGaInN thin barriers were analyzed with the consideration of carrier transport effect for efficiency droop suppression. The lattice-matched AlGaInN quaternary alloys with different compositions, thicknesses, and positions were employed as thin barrier layers (1-2 nm) surrounding the InGaN QW in LED structures. The increased effective barrier heights of AlGaInN thin barrier led to suppression of carrier leakage as compared to conventional InGaN QW LEDs with GaN barrier only. The current work provides a comprehensive simulation taking into consideration the carrier transport in self-consistent manner, and the finding indicated the use of thin layers of AlGaInN or AlInN barriers as sufficient for suppressing the droop in InGaN-based QW LEDs. The efficiency of InGaN QW LED with the insertion of lattice-matched Al 0.82 In 0.18 N thin barrier layers showed the least droop phenomenon at high current density among the investigated LEDs. The thickness study indicated that a thin layer (< 2 nm) of large-bandgap material in the barrier region was sufficient for efficiency droop suppression.

Original languageEnglish (US)
Article number6488705
JournalIEEE Photonics Journal
Volume5
Issue number2
DOIs
StatePublished - Apr 22 2013

Keywords

  • Efficiency droop
  • III-nitride
  • InGaN quantum wells (QWs)
  • internal quantum efficiency (IQE)
  • light-emitting diodes (LEDs)
  • thin barrier design

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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