Effects of the surface roughness of plastic-compatible inorganic dielectrics on polymeric thin film transistors

Michael L. Chabinyc*, Rene Lujan, Fred Endicott, Michael F. Toney, Iain McCulloch, Martin Heeney

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

The effects of the roughness of the gate dielectric on the performance of thin film transistors (TFTs) fabricated with poly(2,5-bis(3-hexadecylthiophen-2- yl)thieno[3,2- b] thiophene) (PBTTT-C16) were examined. The field effect mobility of coplanar TFTs made with PBTTT-C16 and plasma-enhanced chemical vapor deposited Si O2 Si Nx dielectrics decreased nearly exponentially with surface roughness. Films of PBTTT-C16 have similar crystalline structure on smooth and rough surfaces, but the domain size decreases with increasing roughness. Surface roughness was found to have less of an impact on field effect mobility than the chemical treatment of the dielectric.

Original languageEnglish (US)
Article number233508
JournalApplied Physics Letters
Volume90
Issue number23
DOIs
StatePublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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