We investigated the effects of size on electrical and optical properties of InGaN-based red light-emitting diodes (LEDs) by designing rectangular chips with different mesa lengths. Larger chips exhibited lower forward voltages because of their lower series resistances. A larger chip helped to realize a longer emission wavelength, narrower full-width at half maximum, and higher external quantum efficiency. However, temperature-dependent electroluminescence measurements indicated that larger chips are detrimental to applications where high temperature tolerance is required. In contrast, a smaller red LED chip achieved a high characteristic temperature of 399 K and a small redshift tendency of 0.066 nm K1 , thus showing potential for temperature tolerant lighting applications.