Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes

Zhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa

Research output: Contribution to journalArticlepeer-review

Abstract

We investigated the effects of size on electrical and optical properties of InGaN-based red light-emitting diodes (LEDs) by designing rectangular chips with different mesa lengths. Larger chips exhibited lower forward voltages because of their lower series resistances. A larger chip helped to realize a longer emission wavelength, narrower full-width at half maximum, and higher external quantum efficiency. However, temperature-dependent electroluminescence measurements indicated that larger chips are detrimental to applications where high temperature tolerance is required. In contrast, a smaller red LED chip achieved a high characteristic temperature of 399 K and a small redshift tendency of 0.066 nm K1 , thus showing potential for temperature tolerant lighting applications.
Original languageEnglish (US)
Pages (from-to)173501
JournalApplied Physics Letters
Volume116
Issue number17
DOIs
StatePublished - Apr 27 2020

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