Effects of QD surface coverage in solid-state PbS quantum dot-sensitized solar cells

Katherine E. Roelofs, Thomas P. Brennan, Orlando Trejo, John Xu, Fritz B. Prinz, Stacey F. Bent

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Lead sulfide quantum dots (QDs) were grown in situ on nanoporous TiO 2 by successive ion layer adsorption and reaction (SILAR) and by atomic layer deposition (ALD), to fabricate solid-state quantum-dot sensitized solar cells (QDSSCs). With the ultimate goal of increasing QD surface coverage, this work compares the impact of these two synthetic routes on the light absorption and electrical properties of devices. A higher current density was observed in the SILAR-grown QD devices under reverse bias, as compared to ALD-grown QD devices, attributed to injection problems of the lower-band-gap QDs present in the SILAR-grown QD device. To understand the effects of QD surface coverage on device performance, particularly interfacial recombination, electron lifetimes were measured for varying QD deposition cycles. Electron lifetimes were found to decrease with increasing SILAR cycles, indicating that the expected decrease in recombination between electrons in the TiO2 and holes in the hole-transport material, due to increased QD surface coverage, is not the dominant effect of increased deposition cycles. © 2013 IEEE.
Original languageEnglish (US)
Title of host publication2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1080-1083
Number of pages4
ISBN (Print)9781479932993
DOIs
StatePublished - Jun 2013
Externally publishedYes

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