Effects of intermixing on gain and alpha factors of quantum-dash lasers

C. Chen*, Y. Wang, C. L. Tan, H. S. Djie, Boon Ooi, J. C.M. Hwang, G. T. Dang, W. H. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Gain and alpha factors were measured on InAs-InAlGaAs quantum-dash lasers with their heterostructures intermixed by either a dielectric-capping or ion-implantation technique. The laser intermixed by the dielectric-capping technique exhibits a blue shift as much as 93 nm without degrading the laser quality. In comparison, the laser intermixed by the ion-implantation technique has a larger shift but lower differential gain and higher alpha factor. The result implies that quantum-dash lasers of different wavelengths can be effectively integrated on the same chip by the dielectric-capping intermixing technique.

Original languageEnglish (US)
Pages (from-to)1654-1656
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number19
DOIs
StatePublished - Sep 25 2008

Keywords

  • Diffusion processes
  • Gain measurement
  • Quantum dots
  • Quantum wells
  • Quantum wires
  • Quantum-well lasers
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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