Effects of TiN thickness on metal/high-k SOI FinFET characteristics were studied. Compared to planar SOI devices, our metal/high-k FinFETs showed improved carrier mobility due to a vertical strain effect. Almost 2X higher field mobility for a (110)/〈110〉 nMOSFET was achieved. With increasing TiN thickness, electron and hole mobility improved in long channel devices due to improved interface quality. As channel length decreased, however, thinner TiN showed higher electron mobility but lower hole mobility due to a strain effect. These results suggest that integrating different metal thicknesses in metal gate/high-k CMOS FinFETs is a promising method to maximize device performance.