Effects of ALD TiN metal gate thickness on metal gate /high-k dielectric SOI FinFET characteristics

C. Y. Kang, R. Choi, S. C. Song, B. S. Ju, Muhammad Mustafa Hussain, B. H. Lee, J. W. Yang, P. Zeitzoff, D. Pham, W. Xiong, H. H. Tseng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

Effects of TiN thickness on metal/high-k SOI FinFET characteristics were studied. Compared to planar SOI devices, our metal/high-k FinFETs showed improved carrier mobility due to a vertical strain effect. Almost 2X higher field mobility for a (110)/〈110〉 nMOSFET was achieved. With increasing TiN thickness, electron and hole mobility improved in long channel devices due to improved interface quality. As channel length decreased, however, thinner TiN showed higher electron mobility but lower hole mobility due to a strain effect. These results suggest that integrating different metal thicknesses in metal gate/high-k CMOS FinFETs is a promising method to maximize device performance.

Original languageEnglish (US)
Title of host publication2006 IEEE international SOI Conference Proceedings
Pages135-136
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event2006 IEEE International Silicon on Insulator Conference, SOI - Niagara Falls, NY, United States
Duration: Oct 2 2006Oct 5 2006

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Other

Other2006 IEEE International Silicon on Insulator Conference, SOI
CountryUnited States
CityNiagara Falls, NY
Period10/2/0610/5/06

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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