Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques

Z. C. Feng*, I. Ferguson, R. A. Stall, K. Li, Y. Shi, H. Singh, K. Tone, J. H. Zhao, A. T S Wee, K. L. Tan, F. Adar, B. Lenain

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Effects of Al+-C+ co-implantation and annealing in epitaxial n-type 6H-SiC have been studied by high resolution X-ray diffraction (HRXRD), Fourier transform infrared (FTIR) reflectance, Raman scattering (RS) and Secondary ion mass spectroscopy (SIMS). Correlations between structural/optical properties and ion implantation/annealing processes are presented. The recovery of the 6H-SiC crystallinity due to the high temperature annealing after Al+-C+ implantation has been realized and confirmed by this study.

Original languageEnglish (US)
Pages (from-to)693-696
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
StatePublished - 1998
Externally publishedYes

Keywords

  • 6H-SiC
  • Annealing
  • FTIR
  • Ion-Implantation
  • Raman Scattering
  • SIMS
  • X-Ray Diffraction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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