Effective work function modification of atomic-layer-deposited-TaN film by capping layer

K. Choi*, Husam Niman Alshareef, H. C. Wen, H. Harris, H. Luan, Y. Senzaki, P. Lysaght, P. Majhi, B. H. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

We demonstrate that the metallic capping layer has a strong impact on the effective work function (EWF) of the metal gate. Specifically, the EWF of atomic-layer-deposited (ALD)-TaN could be increased from 4.5 to 4.8 eV with chemical-vapor-deposited-TiN capping, which is sufficient amount of work function modification for silicon on insulator based devices. A strong interdiffusion of Ti atoms into the ALD-TaN film is observed and correlated well with the changes in the EWF change. Ti capping experiments confirm that the Ti interdiffusion can actually modify the EWF of Ti/ALD-TaN stack.

Original languageEnglish (US)
Article number032113
JournalApplied Physics Letters
Volume89
Issue number3
DOIs
StatePublished - Jul 28 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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