Effective antireflection properties of porous silicon nanowires for photovoltaic applications

Adel Najar, Ahmad Al-Jabr, Mohammad Alsunaidi, Dalaver H. Anjum, Tien Khee Ng, Boon S. Ooi, Ahmed Ben Slimane, Rachid Sougrat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of
Original languageEnglish (US)
Title of host publication2013 Saudi International Electronics, Communications and Photonics Conference
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)9781467361958
DOIs
StatePublished - Jul 11 2013

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