Effect of ultraviolet illumination on metal oxide resistive memory

Jose Ramon Duran Retamal, Chen-Fang Kang, Chih-Hsiang Ho, Jr-Jian Ke, Wen-Yuan Chang, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.
Original languageEnglish (US)
Pages (from-to)253111
JournalApplied Physics Letters
Volume105
Issue number25
DOIs
StatePublished - Dec 22 2014

Fingerprint Dive into the research topics of 'Effect of ultraviolet illumination on metal oxide resistive memory'. Together they form a unique fingerprint.

Cite this