Effect of thermal radiation and absorption in GaN-MOVPE growth modeling on temperature distribution and chemical state

Akira Hirako*, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

The effect of radiative heat transfer in metalorganic vapor-phase epitaxial growth of GaN on temperature distribution and chemical state was studied. We compared numerical simulations performed by using four kinds of models for the quartz absorptivity, transmissivity and reflectivity. The models are a transparent-body model, a blackbody model and two models using the experimental data measured at room temperature and at 1073 K by Fourier transform infrared spectroscopy. Numerical simulation using these models exhibited different results in temperature and chemical states, indicating that absorption of the quartz optical property at the elevated temperature is important to calculate accurate temperature field and chemical reactions.

Original languageEnglish (US)
Pages (from-to)57-63
Number of pages7
JournalJournal of Crystal Growth
Volume276
Issue number1-2
DOIs
StatePublished - Mar 15 2005

Keywords

  • A1. Computer simulation
  • A1. Heat transfer
  • A3. Metalorganic vapor-phase epitaxy
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics

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