Effect of the number of stacking layers on the characteristics of quantum-dash lasers

Mohammed Zahed Mustafa Khan, Pallab K. Bhattacharya, Tien Khee Ng, Boon S. Ooi, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region.
Original languageEnglish (US)
Pages (from-to)13378
JournalOptics Express
Volume19
Issue number14
DOIs
StatePublished - Jun 27 2011

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