Effect of the interface glass on electrical performance of screen printed Ag thick-film contacts of Si solar cells

Yaping Zhang, Yunxia Yang*, Jianhua Zheng, Guorong Chen, Chen Cheng, James C.M. Hwang, Boon Ooi, Andriy Kovalskiy, Himanshu Jain

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Glasses with compositions (40 - x)PbO - xZnO - 60(B2O 3 - SiO2) (x = 5, 10, 15, 20) have been prepared. Substitution of ZnO for PbO increased glass bandgap (Eg) and crystallization ability greatly. Crystalline phases of bulk glasses after rapid thermal processing (RTP) were identified by X-ray diffraction (XRD). Transmission line model (TLM) was employed to measure the electrical performance of Ag electrodes screen printed on polycrystalline Si substrates using Ag thick-film pastes and by RTP. The conductivity (σ) decreased while specific contact resistance (ρc) was not monotonic varied with increasing ZnO content. The correlation between electrical performance and glass barrier formed on the Ag gridline and Si emitter interface has been investigated.

Original languageEnglish (US)
JournalThin Solid Films
Volume518
Issue number24 SUPPL.
DOIs
StatePublished - Oct 1 2010

Keywords

  • Ag/Si contacts
  • Barrier
  • Glass
  • Photovoltaic
  • Polycrystalline Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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