Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL

M. S. Khairul Anuar*, Mohd Sharizal Bin Alias, S. M. Mitani, Y. Mohamed Razman, A. F. Awang Mat, P. K. Choudhury

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The paper deals with the development of Ni/Au/Ge/Au ohmic contacts for the fabrication of VCSELs to be operated in the 980 nm of the electromagnetic (EM) spectrum. The VCSEL structures are grown by the process of molecular beam epitaxy (MBE) whereas the contacts are deposited by electron beam evaporator. The n-contact metallization has been performed along with RTA before as well as after the fabrication of the VCSEL structure, and the effect of RTA treatment on the grown VCSEL has been studied in the different cases.

Original languageEnglish (US)
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages373-377
Number of pages5
DOIs
StatePublished - Dec 1 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: Nov 29 2006Dec 1 2006

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period11/29/0612/1/06

ASJC Scopus subject areas

  • Engineering(all)

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