Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

T. S. Drake*, C. Ní Chléirigh, M. L. Lee, A. J. Pitera, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, J. L. Hoyt

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    40 Scopus citations

    Abstract

    A study was performed on effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers. The fabrication of these layers was performed by epitaxial growth of strained silicon on relaxed SiGe, wafer bonding and an etch-back technique. It was found that on using 325 nm Raman spectroscopy, no strain relaxation was observed.

    Original languageEnglish (US)
    Pages (from-to)875-877
    Number of pages3
    JournalApplied Physics Letters
    Volume83
    Issue number5
    DOIs
    StatePublished - Aug 4 2003

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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