Effect of precursor pulse time on charge trapping and mobility of ALD HfO2

Mohammad S. Akbar*, Naim Moumen, Jeff Peterson, Joel Barnett, Muhammad Mustafa Hussain, Jack C. Lee

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

In this work, the effect of ALD (atomic layer deposition) precursor HfCl4 pulse time has been investigated systematically to characterize the electrical performance of HfO2 devices. Improvement in bulk trapping and interface characteristics along with slight mobility improvement has been achieved as compared to devices with HfO2 deposited with a standard pulse time of 150ms. Moreover, these devices did not show any apparent change in EOT or leakage current characteristics. Pulse time of 450ms has been considered to be the optimized process condition. Drastic increase in pulse time (1500ms) negated the benefit.

Original languageEnglish (US)
Pages161-168
Number of pages8
StatePublished - Dec 1 2005
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005

Other

Other207th ECS Meeting
CountryCanada
CityQuebec
Period05/16/0505/20/05

ASJC Scopus subject areas

  • Engineering(all)

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