Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

K. Y. Lai, G. J. Lin, Y. L. Lai, Y. F. Chen, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

86 Scopus citations

Abstract

Severe In fluctuation was observed in In 0.3 Ga 0.7 N/GaN multiple quantum well solar cells using scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. The high In content and fluctuation lead to low fill factor (FF) of 30% and energy conversion efficiency (η) of 0.48% under the illumination of AM 1.5G. As the temperature was increased from 250 to 300 K, FF and were substantially enhanced. This strong temperature-dependent enhancement is attributed to the additional contribution to the photocurrents by the thermally activated carriers, which are originally trapped in the shallow quantum wells resulting from the inhomogeneous In distribution.

Original languageEnglish (US)
Article number081103
JournalApplied Physics Letters
Volume96
Issue number8
DOIs
StatePublished - Mar 12 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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