The growth of GaInNAs with different In and N composition on GaAs substrate and its effect on XRD-FWHM and low-temperature PL peak wavelength is presented. It is shown that when higher rf plasma power is used to grow GaInNAs with N content exceeding 2.6%, an abrupt increase in XRD-FWHM is observed. It is believed that the rapid degradation in GaInNAs crystal quality at high rf plasma power is due to greater incorporation of N as interstitials.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Sep 1 2002|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering