Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy

W. K. Loke, S. F. Yoon*, Tien Khee Ng, S. Z. Wang, W. J. Fan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The growth of GaInNAs with different In and N composition on GaAs substrate and its effect on XRD-FWHM and low-temperature PL peak wavelength is presented. It is shown that when higher rf plasma power is used to grow GaInNAs with N content exceeding 2.6%, an abrupt increase in XRD-FWHM is observed. It is believed that the rapid degradation in GaInNAs crystal quality at high rf plasma power is due to greater incorporation of N as interstitials.

Original languageEnglish (US)
Pages (from-to)2091-2095
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number5
DOIs
StatePublished - Sep 1 2002

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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