Effect of in and N incorporation on the GaInNAs VCSELs

Nor Azlian Abdul Manaf, Mohd Sharizal Alias, Sufian Mousa Mithani, Mohamed Razman Yahya, Abdul Fatah Awang Mat

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We study the effect of In and N content in GaInNAs material system for application of 1.3 μm vertical cavity surface emitting lasers (VCSEL). The emission wavelength are successfully observed at 1.303 μm wavelength. VCSEL sample with Ga0.58In0.42As QW give the highest output power (0.5694 mW) with threshold current 11mA. OCIS codes: (250.7260) Vertical cavity surface emitting lasers; (160.6000) Semiconductor materials

Original languageEnglish (US)
Title of host publication2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009
StatePublished - 2009
Externally publishedYes
Event2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009 - Shanghai, China
Duration: Nov 2 2009Nov 6 2009

Other

Other2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009
CountryChina
CityShanghai
Period11/2/0911/6/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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