Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy

S. Soltani, M. Bouzidi, Z. Chine, A. Toure, I. Halidou, B. El Jani, M. K. Shakfa

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Pages (from-to)2-2
Number of pages1
JournalThin Solid Films
Volume630
DOIs
StatePublished - Feb 17 2017

ASJC Scopus subject areas

  • Materials Chemistry
  • Surfaces and Interfaces
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Metals and Alloys

Fingerprint Dive into the research topics of 'Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy'. Together they form a unique fingerprint.

Cite this