Effect of gate dielectrics on the performance of p-type Cu2O TFTs processed at room temperature

Hala A. Al-Jawhari, Jesus Alfonso Caraveo-Frescas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Single-phase Cu2O films with p-type semiconducting properties were successfully deposited by reactive DC magnetron sputtering at room temperature followed by post annealing process at 200°C. Subsequently, such films were used to fabricate bottom gate p-channel Cu2O thin film transistors (TFTs). The effect of using high-κ SrTiO3 (STO) as a gate dielectric on the Cu2O TFT performance was investigated. The results were then compared to our baseline process which uses a 220 nm aluminum titanium oxide (ATO) dielectric deposited on a glass substrate coated with a 200 nm indium tin oxide (ITO) gate electrode. We found that with a 150 nm thick STO, the Cu2O TFTs exhibited a p-type behavior with a field-effect mobility of 0.54 cm2.V-1.s-1, an on/off ratio of around 44, threshold voltage equaling -0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of -2V. The advantages of using STO as a gate dielectric relative to ATO are discussed. © (2014) Trans Tech Publications, Switzerland.
Original languageEnglish (US)
Title of host publicationAdvanced Materials Research
PublisherTrans Tech Publications
Pages215-219
Number of pages5
ISBN (Print)9783037859636
DOIs
StatePublished - Dec 2013

ASJC Scopus subject areas

  • Engineering(all)

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