Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers

Mohammed Zahed Mustafa Khan, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance. © 2011 IEEE.
Original languageEnglish (US)
Title of host publication8th International Conference on High-capacity Optical Networks and Emerging Technologies
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages182-184
Number of pages3
ISBN (Print)9781457711695
DOIs
StatePublished - Dec 2011

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