Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layers

K. Ohkawa*, T. Mitsuyu, O. Yamazaki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

74 Scopus citations

Abstract

N-doped and Ga-doped ZnSe layers grown by molecular-beam epitaxy on GaAs substrates exhibited double peaks for both the neutral-acceptor-boundexciton line (I1) and the neutral-donor-bound exciton line (I2) in low-temperature photoluminescence measurements. The split energy of the double peaks corresponds to an activation energy derived from the Arrhenius plot of intensity ratio of the double peak. Peak energies of the double peaks are calculated from energy shifts of valence bands split by biaxial strain, produced by lattice mismatch and differences in thermal contraction between ZnSe and GaAs. These indicate that the double peak of both bound-exciton lines was yielded from two kinds of excitons related to a light hole and a heavy hole of the valence bands. Thus it should be pointed out that the Ix line generally reported in n-type ZnSe heteroepitaxial layers corresponds to a light-hole branch of usual I2 line.

Original languageEnglish (US)
Pages (from-to)12465-12469
Number of pages5
JournalPhysical Review B
Volume38
Issue number17
DOIs
StatePublished - 1988
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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