Effect of antiphase boundaries on electrical transport properties of Fe 3O 4 nanostructures

Hongliang Li*, Yihong Wu, Zaibing Guo, Shijie Wang, Kie Leong Teo, Teodor Veres

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    17 Scopus citations

    Abstract

    Fe 3O 4 nanowires have been fabricated based on Fe 3O 4 thin films grown on α-Al 2O 3 (0001) substrates using the hard mask and ion milling technique. Compared with thin films, the Fe 3O 4 nanowire exhibits a slightly sharper Verwey transition but pronounced anisotropic magnetoresistance properties in the film plane at low magnetic field. Detailed bias-dependence study of both the conductance and magnetoresistance curves for both the thin films and nanowires suggests that the electrical conduction in magnetite near and above the Verwey transition temperature is dominated by a tunneling mechanism across antiphase boundaries.

    Original languageEnglish (US)
    Article number252507
    Pages (from-to)1-3
    Number of pages3
    JournalApplied Physics Letters
    Volume86
    Issue number25
    DOIs
    StatePublished - Sep 13 2005

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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