Effect of annealing on the temperature-dependent dielectric properties of LaAlO3 at terahertz frequencies

Xingquan Zou, Mi He, Daniel Springer, Dongwook Lee, Saritha K. Naiz, Siew Ann Cheong, Tao Wu, C. Panagopoulos, D. Talbayev, Elbert E.M. Chia*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We present THz conductivity of LaAlO3 (LAO) as a function of temperature and annealing, using terahertz time-domain spectroscopy (THz-TDS). We observed that, after annealing, spectral weight redistribution occurs, such that the real conductivity ?1(ω) changed from a featureless and almost frequency-independent spectrum, into one where peaks occur near the phonon frequencies. These phonon frequencies increase with increasing temperature.We attribute the appearance of these absorption peaks to the diffusion and relocation of oxygen vacancies. The dielectric functions of annealed LAO are well fitted with the Drude-Lorentz model.

Original languageEnglish (US)
Article number038
JournalAIP Advances
Volume2
Issue number1
DOIs
StatePublished - Dec 1 2012

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Effect of annealing on the temperature-dependent dielectric properties of LaAlO3 at terahertz frequencies'. Together they form a unique fingerprint.

Cite this