The authors report on the effect of quantum-dash (Qdash) inhomogeneity on the characteristics of InAs/InP Qdash laser utilizing a single state rate equation model. The inhomogeneity is assumed to follow the Gaussian approximation. From our observation, an increased in Qdash inhomogeneity results in increasing of threshold current density and redshifting of the peak lasing wavelength. The lasing linewidth of the Qdash lasers has also found to increase under large injection current, attaining a full width at half maximum (FWHM) of ~ 17 nm.
|Original language||English (US)|
|Title of host publication||2010 Photonics Global Conference|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|State||Published - 2010|