In this paper Electron Beam Lithography is used for fabrication of T-shape gates for GaAs MESFETs with foot dimension down to 80 nm. A double resist layer composed by PMMA and its copolimer was characterized by means of dosage latitude experiments. The investigated variables include the accelerating voltage (20 kV and 40 kV), the resist thickness and the developer concentration. Furthermore, use of Monte Carlo scattering simulation and resist profile modelling also allowed clarification of the experimentally observed process behaviour.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering