Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

Simon G.J. Mathijssen*, Michael Cölle, Henrique Gomes, Edsger C.P. Smits, Bert De Boer, Iain McCulloch, Peter A. Bobbert, Dago M. De Leeuw

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

211 Scopus citations

Abstract

Polytriarylamine (PTAA) was used as a model compound, to demonstrate the dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors (FET). PTAA films were spin-coated from toluene, with a layer thickness of 80 nm and their reliability was compared with other polymer films, such as poly(3-hexylthiophene) (P3HT). The influence drain bias current on the stress behavior of these PTAA FETs were also investigated. The measurement of bias current was performed in vacuum at 100°C and it was observed that the current decreased slowly with time. It was assumed that the threshold-voltage shift was due to the effect of trapped charges with surface density. Stress measurements on the PTAA transistors were also performed at various temperatures, to investigate the trapping dynamics.

Original languageEnglish (US)
Pages (from-to)2785-2789
Number of pages5
JournalAdvanced Materials
Volume19
Issue number19
DOIs
StatePublished - Oct 5 2007

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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