Dynamics of exciton recombination in InAs Quantum Dots embedded in InGaAs/GaAs Quantum Well

Xiaodong Mu*, Yujie J. Ding, Boon S. Ooi, Mark Hopkinson

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well.

Original languageEnglish (US)
Title of host publication2007 Quantum Electronics and Laser Science Conference, QELS
DOIs
StatePublished - 2007
Externally publishedYes
Event2007 Quantum Electronics and Laser Science Conference, QELS - Baltimore, MD, United States
Duration: May 6 2007May 11 2007

Other

Other2007 Quantum Electronics and Laser Science Conference, QELS
CountryUnited States
CityBaltimore, MD
Period05/6/0705/11/07

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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