Abstract
Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well.
| Original language | English (US) |
|---|---|
| Title of host publication | Quantum Electronics and Laser Science Conference, QELS 2007 |
| Publisher | Optical Society of America |
| ISBN (Print) | 1557528349, 9781557528346 |
| State | Published - 2007 |
| Externally published | Yes |
| Event | Quantum Electronics and Laser Science Conference, QELS 2007 - Baltimore, MD, United States Duration: May 6 2007 → May 6 2007 |
Other
| Other | Quantum Electronics and Laser Science Conference, QELS 2007 |
|---|---|
| Country | United States |
| City | Baltimore, MD |
| Period | 05/6/07 → 05/6/07 |
ASJC Scopus subject areas
- Instrumentation
- Atomic and Molecular Physics, and Optics