Dynamic simulations of a novel RF MEMS switch

Mohammad I. Younis*, Eihab M. Abdel-Rahman, Ali H. Nayfeh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

We present a dynamic analysis of a novel RF MEMS switch utilizing the dynamic pull-in phenomenon. We study this phenomenon and present guidelines about its mechanism. We propose to utilize this phenomenon to design a novel RF MEMS switch, which can be actuated by a voltage load as low as 40% of the traditionally used static pull-in voltage. The switch is actuated using a combined DC and AC loading. The AC loading can be tuned by altering its amplitude and/or frequency to reach the pull-in instability with the lowest driving voltage and fastest response speed. The new actuation method can solve a major problem in the design of RF MEMS switches, which is the high deriving voltage requirement.

Original languageEnglish (US)
Title of host publication2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
EditorsM. Laudon, B. Romanowicz
Pages287-290
Number of pages4
Volume2
StatePublished - 2004
Externally publishedYes
Event2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States
Duration: Mar 7 2004Mar 11 2004

Other

Other2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
CountryUnited States
CityBoston, MA
Period03/7/0403/11/04

Keywords

  • Dynamic pull-in
  • Electric actuation
  • Microbeams
  • RF switches

ASJC Scopus subject areas

  • Engineering(all)

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