Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

Yi-Jen Huang, Shih-Chun Chao, Der-Hsien Lien, Cheng-Yen Wen, Jr-Hau He, Si-Chen Lee

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (
Original languageEnglish (US)
JournalScientific Reports
Volume6
Issue number1
DOIs
StatePublished - Apr 7 2016

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