Dual-Function Electron-Conductive, Hole-Blocking Titanium Nitride Contacts for Efficient Silicon Solar Cells

Xinbo Yang, Wenzhu Liu, Michele de Bastiani, Thomas Allen, Jingxuan Kang, Hang Xu, Erkan Aydin, Lujia Xu, Qunyu Bi, Hoang Dang, Esra AlHabshi, Konstantinos Kotsovos, Ahmed AlSaggaf, Issam Gereige, Yimao Wan, Jun Peng, Christian Samundsett, Andres Cuevas, Stefaan De Wolf

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

High-performance passivating contact is a prerequisite for high-efficiency crystalline silicon (c-Si) solar cells. In this work, an electron-conductive, hole-blocking contact based on titanium nitride (TiN) deposited by reactive magnetron sputtering is presented. Quasi-metallic TiN combined with an ultrathin SiO2 passivation layer (SiO2/TiN) is demonstrated to be an effective electron-selective contact on c-Si, featuring a low-contact resistivity of 16.4 mΩ.cm2 and a tolerable recombination current parameter of ∼500 fA/cm2. By implementing the dual-function SiO2/TiN contact, which acts simultaneously as a surface passivating layer and metal electrode, an efficiency of 20% is achieved by an n-type c-Si solar cell with a simple structure. This work not only demonstrates a way to develop efficient n-type c-Si solar cells with dual-function metal nitride contacts at a low cost but also expands the pool of available carrier transport materials, from metal oxides to metal nitrides, for photovoltaic devices.
Original languageEnglish (US)
Pages (from-to)1314-1327
Number of pages14
JournalJoule
Volume3
Issue number5
DOIs
StatePublished - Apr 16 2019

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