Dual Beam Lithography (FIB + EBL) for nanometric structures

Stefano Cabrini; Alessandro Carpentiero; Luca Businaro; Patrizio Candeloro; Filippo Romanato; Enzo Di Fabrizio

Dual Beam Lithography (FIB + EBL) for nanometric structures

Stefano Cabrini^*, Alessandro Carpentiero, Luca Businaro, Patrizio Candeloro, Filippo Romanato, Enzo Di Fabrizio

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A dual-beam LEO XB 1540 was used to fabricate devices with a resolution down to nanometric scale, exploiting FIB milling (FIBM), FIB Gas Assisted Etching (FIBGAE), and E-beam or I-beam induced deposition. The two dimensional (2D) photonic band gap structures on GaAs/AlGaAs, Si₃N₄, and Si/SiO₂ were fabricated. The one-dimensional (1D) optical wave guide milling down 500 microns long stipe was also fabricated for 1.5 micron deep the slab by FIB and then the periodic structure were kept on the path. It was found that to avoid the tear effects and the resputtering effects the XeF₂ gas was used during the milling (FIBGAE) that produced a volatile compound with the gallium and silicon.

Original language	English (US)
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2004
Pages	150-151
Number of pages	2
State	Published - 2004
Externally published	Yes
Event	2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan Duration: Oct 26 2004 → Oct 29 2004

Other

Other	2004 International Microprocesses and Nanotechnology Conference
Country	Japan
City	Osaka
Period	10/26/04 → 10/29/04

ASJC Scopus subject areas

Engineering(all)

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title = "Dual Beam Lithography (FIB + EBL) for nanometric structures",

abstract = "A dual-beam LEO XB 1540 was used to fabricate devices with a resolution down to nanometric scale, exploiting FIB milling (FIBM), FIB Gas Assisted Etching (FIBGAE), and E-beam or I-beam induced deposition. The two dimensional (2D) photonic band gap structures on GaAs/AlGaAs, Si3N4, and Si/SiO2 were fabricated. The one-dimensional (1D) optical wave guide milling down 500 microns long stipe was also fabricated for 1.5 micron deep the slab by FIB and then the periodic structure were kept on the path. It was found that to avoid the tear effects and the resputtering effects the XeF2 gas was used during the milling (FIBGAE) that produced a volatile compound with the gallium and silicon.",

author = "Stefano Cabrini and Alessandro Carpentiero and Luca Businaro and Patrizio Candeloro and Filippo Romanato and {Di Fabrizio}, Enzo",

year = "2004",

language = "English (US)",

isbn = "4990247205",

pages = "150--151",

booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2004",

note = "2004 International Microprocesses and Nanotechnology Conference ; Conference date: 26-10-2004 Through 29-10-2004",

}

TY - GEN

T1 - Dual Beam Lithography (FIB + EBL) for nanometric structures

AU - Cabrini, Stefano

AU - Carpentiero, Alessandro

AU - Businaro, Luca

AU - Candeloro, Patrizio

AU - Romanato, Filippo

AU - Di Fabrizio, Enzo

PY - 2004

Y1 - 2004

N2 - A dual-beam LEO XB 1540 was used to fabricate devices with a resolution down to nanometric scale, exploiting FIB milling (FIBM), FIB Gas Assisted Etching (FIBGAE), and E-beam or I-beam induced deposition. The two dimensional (2D) photonic band gap structures on GaAs/AlGaAs, Si3N4, and Si/SiO2 were fabricated. The one-dimensional (1D) optical wave guide milling down 500 microns long stipe was also fabricated for 1.5 micron deep the slab by FIB and then the periodic structure were kept on the path. It was found that to avoid the tear effects and the resputtering effects the XeF2 gas was used during the milling (FIBGAE) that produced a volatile compound with the gallium and silicon.

AB - A dual-beam LEO XB 1540 was used to fabricate devices with a resolution down to nanometric scale, exploiting FIB milling (FIBM), FIB Gas Assisted Etching (FIBGAE), and E-beam or I-beam induced deposition. The two dimensional (2D) photonic band gap structures on GaAs/AlGaAs, Si3N4, and Si/SiO2 were fabricated. The one-dimensional (1D) optical wave guide milling down 500 microns long stipe was also fabricated for 1.5 micron deep the slab by FIB and then the periodic structure were kept on the path. It was found that to avoid the tear effects and the resputtering effects the XeF2 gas was used during the milling (FIBGAE) that produced a volatile compound with the gallium and silicon.

UR - http://www.scopus.com/inward/record.url?scp=23244447882&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:23244447882

SN - 4990247205

SP - 150

EP - 151

BT - Digest of Papers - Microprocesses and Nanotechnology 2004

T2 - 2004 International Microprocesses and Nanotechnology Conference

Y2 - 26 October 2004 through 29 October 2004

ER -

Dual Beam Lithography (FIB + EBL) for nanometric structures

Abstract

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ASJC Scopus subject areas

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