Dual Beam Lithography (FIB + EBL) for nanometric structures

Stefano Cabrini*, Alessandro Carpentiero, Luca Businaro, Patrizio Candeloro, Filippo Romanato, Enzo Di Fabrizio

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A dual-beam LEO XB 1540 was used to fabricate devices with a resolution down to nanometric scale, exploiting FIB milling (FIBM), FIB Gas Assisted Etching (FIBGAE), and E-beam or I-beam induced deposition. The two dimensional (2D) photonic band gap structures on GaAs/AlGaAs, Si3N4, and Si/SiO2 were fabricated. The one-dimensional (1D) optical wave guide milling down 500 microns long stipe was also fabricated for 1.5 micron deep the slab by FIB and then the periodic structure were kept on the path. It was found that to avoid the tear effects and the resputtering effects the XeF2 gas was used during the milling (FIBGAE) that produced a volatile compound with the gallium and silicon.

Original languageEnglish (US)
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2004
Pages150-151
Number of pages2
StatePublished - 2004
Externally publishedYes
Event2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
Duration: Oct 26 2004Oct 29 2004

Other

Other2004 International Microprocesses and Nanotechnology Conference
CountryJapan
CityOsaka
Period10/26/0410/29/04

ASJC Scopus subject areas

  • Engineering(all)

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