Abstract
A dual-beam LEO XB 1540 was used to fabricate devices with a resolution down to nanometric scale, exploiting FIB milling (FIBM), FIB Gas Assisted Etching (FIBGAE), and E-beam or I-beam induced deposition. The two dimensional (2D) photonic band gap structures on GaAs/AlGaAs, Si3N4, and Si/SiO2 were fabricated. The one-dimensional (1D) optical wave guide milling down 500 microns long stipe was also fabricated for 1.5 micron deep the slab by FIB and then the periodic structure were kept on the path. It was found that to avoid the tear effects and the resputtering effects the XeF2 gas was used during the milling (FIBGAE) that produced a volatile compound with the gallium and silicon.
Original language | English (US) |
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Title of host publication | Digest of Papers - Microprocesses and Nanotechnology 2004 |
Pages | 150-151 |
Number of pages | 2 |
State | Published - 2004 |
Externally published | Yes |
Event | 2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan Duration: Oct 26 2004 → Oct 29 2004 |
Other
Other | 2004 International Microprocesses and Nanotechnology Conference |
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Country | Japan |
City | Osaka |
Period | 10/26/04 → 10/29/04 |
ASJC Scopus subject areas
- Engineering(all)