Gallium arsenide (GaAs) is etched in an electron cyclotron resonance system using a Cl2/Ar plasma. A high etch rate GaAs is used via hole processes to study the effects of process parameters on the resultant profiles. Results show that the GaAs etch increases as the Cl2 percentage in the Cl2/Ar plasmas.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Sep 1 2000|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering