Dry via hole etching of GaAs using high-density Cl2/Ar plasma

Y. W. Chen*, Boon Ooi, G. I. Ng, K. Radhakrishnan, C. L. Tan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Gallium arsenide (GaAs) is etched in an electron cyclotron resonance system using a Cl2/Ar plasma. A high etch rate GaAs is used via hole processes to study the effects of process parameters on the resultant profiles. Results show that the GaAs etch increases as the Cl2 percentage in the Cl2/Ar plasmas.

Original languageEnglish (US)
Pages (from-to)2509-2512
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number5
DOIs
StatePublished - Sep 1 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Dry via hole etching of GaAs using high-density Cl<sub>2</sub>/Ar plasma'. Together they form a unique fingerprint.

Cite this