Dry lithography of chemically-amplified acid-catalyzed deep-UV and E-beam resist

Yosef Y. Shacham-Diamand*, C. Lee, Jean M. Frechet, S. M. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The process, chemistry, and characterization of the silylation and dry-development of acid catalyzed resist is described. The resist is sensitive to deep-UV, x ray, and e-beam exposure and its sensitivity can be tailored by the relative concentration of its components. The resist is positive or negative for dry or wet development, respectively. Two silylation agents were studied: Hexamethyldisilazane (HMDS) and N,N-Dimethylaminotrimethylsilane (DMATMS). The silylation was characterized by Fourier-transform-infrared (FTIR) transmission spectroscopy and Rutherford-backscattering spectrometry (RBS). FTIR revealed the total number of OH and SiO bonds, while RBS revealed the composition profile in various regions of the resist. The silylation by HMDS was not well controlled and was characterized by a large incubation period followed by fast penetration. The DMATMS silylation process, however, was well controlled and reproducible. The penetration of the silicon atoms monotonically increased with time until it reached saturation. Films patterned by deep-UV (254 nm) exposure were silylated with DMATMS and were etched by an oxygen plasma in a magnetron ion etcher (MIE). The etch rate of the oxygen plasma was characterized for the unexposed, silylated regions, as well as for the exposed, unsilylated regions. The optimized dry-development process is described and SEM cross sections of lines as narrow as 0.4 μm wide are presented.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsItzhak Shladov, Yitzhak Weissman, Moshe Oron
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages242-250
Number of pages9
Volume1972
ISBN (Print)081941218X
StatePublished - 1993
Externally publishedYes
Event8th Meeting on Optical Engineering on Israel: Optoelectronics and Applications in Industry and Medicine - Tel Aviv, Isr
Duration: Dec 14 1992Dec 16 1992

Other

Other8th Meeting on Optical Engineering on Israel: Optoelectronics and Applications in Industry and Medicine
CityTel Aviv, Isr
Period12/14/9212/16/92

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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