Driving force behind voltage shifts in ferroelectric materials

W. L. Warren*, Husam Niman Alshareef, D. Dimos, B. A. Tuttle, G. E. Pike

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

By systematically poling Pb(Zr,Ti)O3 capacitors to different extents, we observe a linear relationship between the remanent polarization and the magnitude of voltage offsets in the hysteresis curve. This result directly shows that the polarization is the impetus behind voltage shifts and, thus, imprint in ferroelectric capacitors. It is proposed that the increased polarization lowers the electrostatic potential well for the trapping of electrons thereby leading to greater voltage shifts. We also find that the remanent polarization and defect occupancy are temperature dependent which collectively impact the observed voltage offsets measured at elevated temperature.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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