Double-Sided Junctions Enable High-Performance Colloidal-Quantum-Dot Photovoltaics

Mengxia Liu, F. Pelayo García de Arquer, Yiying Li, Xinzheng Lan, Gi-Hwan Kim, Oleksandr Voznyy, Lethy Krishnan Jagadamma, Abdullah Saud Abbas, Sjoerd Hoogland, Zhenghong Lu, Jin Young Kim, Aram Amassian, Edward H. Sargent

Research output: Contribution to journalArticlepeer-review

98 Scopus citations

Abstract

A study is conducted to re-engineer the ZnO electrode to build a doublesided junction, one that includes not only a rectifying nCQD:pCQD junction in the quantum dot solid but also a strongly n+:n junction at the ZnO:nCQD interface. Researchers achieve this by incorporating In 3+ into ZnO, which allows them to simultaneously adjust its band structure and carrier concentration, ultimately benefiting colloidal quantum dots (CQDs) photovoltaic (PV) performance. The degenerately doped electrode forms a rectifying junction with the n-type CQD layer, and this increases the total depleted thickness within the CQD solid when the optimal doping density and electron affinity are achieved.
Original languageEnglish (US)
Pages (from-to)4142-4148
Number of pages7
JournalAdvanced Materials
Volume28
Issue number21
DOIs
StatePublished - Apr 1 2016

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